COMPOSITION AND STRUCTURE OF THE NATIVE SI OXIDE BY HIGH DEPTH RESOLUTION MEDIUM ENERGY ION-SCATTERING

被引：68

作者：

ALBAYATI, AH

ORRMANROSSITER, KG

VANDENBERG, JA

ARMOUR, DG

机构：

[1] Department of Electronic and Electrical Engineering, University of Salford, Salford

来源：

SURFACE SCIENCE | 1991年 / 241卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(91)90214-D

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The structure and composition of the native Si oxide were studied using high depth resolution medium energy ion scattering (MEIS) spectrometry. The analysis revealed that the oxide is an amorphous material of thickness 20 angstrom. The results showed qualitatively that the interface between the oxide and the underlying structure consists of layers of Si atoms displaced from their normal lattice sites. The composition of the native Si oxide varies with depth. The region near the surface is more highly oxidized than that near the interface. However, based on the assumption that there are two nonregistered Si layers in the interface, the results showed that the oxide consists of a layer of stoichiometric SiO2 of thickness approximately 7 angstrom and a layer of suboxide (SiO(x), x < 2) of thickness approximately 6 angstrom.

引用

页码：91 / 102

页数：12

共 24 条

[21] SI(001) DIMER STRUCTURE OBSERVED WITH SCANNING TUNNELING MICROSCOPY [J].