COLUMN-V ACCEPTERS IN ZNSE

被引:35
作者
KWAK, KW
KINGSMITH, RD
VANDERBILT, D
机构
[1] Department of Physics and Astronomy, Rutgers University, Piscataway
关键词
D O I
10.1103/PhysRevB.48.17827
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structural and electronic-properties of substitutional phosphorus and nitrogen impurities in ZnSe are studied using pseudopotential total-energy calculations. Substitutional phosphorus and nitrogen, in their neutral states, form shallow accepters. In the case of phosphorus, the symmetry is lowered from T-d to C-3 upsilon by a Jahn-Teller distortion, and the hole is more localized on the phosphorus site. For nitrogen, however, the Jahn-Teller distortion is so small that the symmetry is approximately T-d, and the hole density is spread around nearby selenium-atom sites. For nitrogen in the positive charge state, two minimal-energy configurations are predicted: a stable state with approximately T-d symmetry and a metastable. state with C-3 upsilon symmetry, which is 0.3 eV higher in energy than the stable one.
引用
收藏
页码:17827 / 17834
页数:8
相关论文
共 40 条
[11]   NEW TIGHT-BINDING PARAMETERS FOR COVALENT SOLIDS OBTAINED USING LOUIE PERIPHERAL STATES [J].
HARRISON, WA .
PHYSICAL REVIEW B, 1981, 24 (10) :5835-5843
[12]   THEORY OF THE 2-CENTER BOND [J].
HARRISON, WA .
PHYSICAL REVIEW B, 1983, 27 (06) :3592-3604
[13]   1ST-PRINCIPLES THEORY OF QUASIPARTICLES - CALCULATION OF BAND-GAPS IN SEMICONDUCTORS AND INSULATORS [J].
HYBERTSEN, MS ;
LOUIE, SG .
PHYSICAL REVIEW LETTERS, 1985, 55 (13) :1418-1421
[14]   ELECTRON CORRELATION IN SEMICONDUCTORS AND INSULATORS - BAND-GAPS AND QUASI-PARTICLE ENERGIES [J].
HYBERTSEN, MS ;
LOUIE, SG .
PHYSICAL REVIEW B, 1986, 34 (08) :5390-5413
[15]   THEORY OF RELATIVE NATIVE-DEFECT AND IMPURITY-DEFECT ABUNDANCES IN COMPOUND SEMICONDUCTORS AND THE FACTORS THAT INFLUENCE THEM [J].
JANSEN, RW ;
SANKEY, OF .
PHYSICAL REVIEW B, 1989, 39 (05) :3192-3206
[16]   CHARGE DISTURBANCE AROUND AN IMPURITY IN SILICON [J].
KANE, EO .
PHYSICAL REVIEW B, 1985, 31 (08) :5199-5207
[17]   PHONON-SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
KANE, EO .
PHYSICAL REVIEW B, 1985, 31 (12) :7865-7876
[18]  
KINGSMITH RD, UNPUB
[19]   SHALLOW ACCEPTORS AND P-TYPE ZNSE [J].
KOSAI, K ;
FITZPATRICK, BJ ;
GRIMMEISS, HG ;
BHARGAVA, RN ;
NEUMARK, GF .
APPLIED PHYSICS LETTERS, 1979, 35 (02) :194-196
[20]   LATTICE-DYNAMICS OF SEVERAL ANB8-N COMPOUNDS HAVING ZINCBLENDE STRUCTURE .2. NUMERICAL-CALCULATIONS [J].
KUNC, K ;
BALKANSKI, M ;
NUSIMOVICI, MA .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 72 (01) :229-248