CHANGES IN SILICON SAMPLES BOMBARDED BY 900-2300 EV HYDROGEN-IONS

被引：10

作者：

PANITZ, JKG

SHARP, DJ

SEAGER, CH

机构：

来源：

THIN SOLID FILMS | 1984年 / 111卷 / 03期

关键词：

D O I：

10.1016/0040-6090(84)90149-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：277 / 284

页数：8

共 12 条

[1]

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HAALAND, DM .

APPLIED PHYSICS LETTERS, 1981, 39 (03) :271-273

[4]

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[5] HYDROGEN PASSIVATION OF DEFECTS IN SILICON RIBBON GROWN BY THE EDGE-DEFINED FILM-FED GROWTH-PROCESS [J].

HANOKA, JI ;

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SHARP, DJ ;

PANITZ, JKG .

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[6] ATOM PROBE ANALYSIS OF RF-SPUTTERED A-SI-H FILMS [J].

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TSONG, TT .

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[7]

SCHMIDT W, 1982, 16TH P IEEE PHOT SPE, P537

[8] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES [J].

SEAGER, CH ;

GINLEY, DS .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) :1050-1055

[9] IMPROVEMENT OF POLYCRYSTALLINE SILICON SOLAR-CELLS WITH GRAIN-BOUNDARY HYDROGENATION TECHNIQUES [J].

SEAGER, CH ;

GINLEY, DS ;

ZOOK, JD .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :831-833

[10] APPLICATIONS OF A KAUFMAN ION-SOURCE TO LOW-ENERGY ION EROSION STUDIES [J].

SHARP, DJ ;

PANITZ, JKG ;

MATTOX, DM .

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