STUDY OF ELECTROCHEMICAL ETCH-STOP FOR HIGH-PRECISION THICKNESS CONTROL OF SILICON MEMBRANES

被引:126
作者
KLOECK, B [1 ]
COLLINS, SD [1 ]
DEROOIJ, NF [1 ]
SMITH, RL [1 ]
机构
[1] UNIV CALIF DAVIS,DEPT ELECT ENGN & COMP SCI,DAVIS,CA 95616
关键词
D O I
10.1109/16.22472
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:663 / 669
页数:7
相关论文
共 17 条
  • [1] [Anonymous], 1980, ELECTROCHEMICAL METH
  • [2] FAUST JW, 1983, J ELECTROCHEM SOC, V130, P1413, DOI 10.1149/1.2119964
  • [3] BIAS-DEPENDENT ETCHING OF SILICON IN AQUEOUS KOH
    GLEMBOCKI, OJ
    STAHLBUSH, RE
    TOMKIEWICZ, M
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 145 - 151
  • [4] Harrison J.A, 1977, ELECTROANALYTICAL CH, V5, P67
  • [5] SILICON DIAPHRAGM PRESSURE SENSORS FABRICATED BY ANODIC-OXIDATION ETCH-STOP
    HIRATA, M
    SUZUKI, K
    TANIGAWA, H
    [J]. SENSORS AND ACTUATORS, 1988, 13 (01): : 63 - 70
  • [6] DIAPHRAGM THICKNESS CONTROL IN SILICON PRESSURE SENSORS USING AN ANODIC-OXIDATION ETCH-STOP
    HIRATA, M
    SUWAZONO, S
    TANIGAWA, H
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) : 2037 - 2041
  • [7] AN ELECTROCHEMICAL P-N-JUNCTION ETCH-STOP FOR THE FORMATION OF SILICON MICROSTRUCTURES
    JACKSON, TN
    TISCHLER, MA
    WISE, KD
    [J]. ELECTRON DEVICE LETTERS, 1981, 2 (02): : 44 - 45
  • [8] KLOECK B, 1986, CAPTEURS 86 C P PARI, P74
  • [9] LEE KW, 1982, 156 U MICH DEP EL CO
  • [10] THE FORMATION OF SURFACES BY DIFFUSION LIMITED ANNIHILATION
    MEAKIN, P
    DEUTCH, JM
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1986, 85 (04) : 2320 - 2325