POLAR OPTICAL-PHONON SCATTERING MOBILITY IN SEMICONDUCTOR QUANTUM-WELLS

被引:16
作者
CHATTOPADHYAY, D [1 ]
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
来源
PHYSICAL REVIEW B | 1986年 / 33卷 / 10期
关键词
D O I
10.1103/PhysRevB.33.7288
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:7288 / 7290
页数:3
相关论文
共 9 条
[1]   INTRINSIC LIMITATIONS ON THE HIGH-SPEED PERFORMANCE OF HIGH ELECTRON-MOBILITY TRANSISTORS [J].
CHIU, LC ;
MARGALIT, S ;
YARIV, A .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1983, 22 (02) :L82-L84
[2]   SCREENING OF POLAR INTERACTION IN QUASI-2-DIMENSIONAL SEMICONDUCTOR MICROSTRUCTURES [J].
DASSARMA, S ;
MASON, BA .
PHYSICAL REVIEW B, 1985, 31 (08) :5536-5538
[3]   EXACT SOLUTION OF LINEARIZED BOLTZMANN-EQUATION WITH APPLICATIONS TO HALL-MOBILITY AND HALL FACTOR OF GAAS [J].
FLETCHER, K ;
BUTCHER, PN .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (02) :212-&
[4]   IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES [J].
HESS, K .
APPLIED PHYSICS LETTERS, 1979, 35 (07) :484-486
[5]   SIZE EFFECTS ON POLAR OPTICAL PHONON-SCATTERING OF 1-D AND 2-D ELECTRON-GAS IN SYNTHETIC SEMICONDUCTORS [J].
LEBURTON, JP .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2850-2855
[6]   DYNAMICAL SCREENING AND CARRIER MOBILITY IN GAAS-GAALAS HETEROSTRUCTURES [J].
LEI, XL .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20) :L593-L597
[7]   ELECTRON MOBILITY IN DIRECT-GAP POLAR SEMICONDUCTORS [J].
RODE, DL .
PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (04) :1012-+
[8]   ELECTRIC-FIELD INDUCED HEATING OF HIGH MOBILITY ELECTRONS IN MODULATION-DOPED GAAS-ALGAAS HETEROSTRUCTURES [J].
SHAH, J ;
PINCZUK, A ;
STORMER, HL ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1983, 42 (01) :55-57
[9]  
STORMER HL, 1981, APPL PHYS LETT, V39, P912, DOI 10.1063/1.92604