ELECTRIC-FIELD INDUCED HEATING OF HIGH MOBILITY ELECTRONS IN MODULATION-DOPED GAAS-ALGAAS HETEROSTRUCTURES

被引：75

作者：

SHAH, J ^{[1
]}

PINCZUK, A ^{[1
]}

STORMER, HL ^{[1
]}

GOSSARD, AC ^{[1
]}

WIEGMANN, W ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 01期

关键词：

D O I：

10.1063/1.93771

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：55 / 57

页数：3

共 12 条

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[7] THE PRESENT STATUS OF MODULATION-DOPED AND INSULATED-GATE FIELD-EFFECT TRANSISTORS IN III-V-SEMICONDUCTORS [J].

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