TURN-OFF TRANSIENTS IN CIRCULAR GEOMETRY MOS PASS TRANSISTORS

被引：7

作者：

KUO, JB

DUTTON, RW

WOOLEY, BA

机构：

来源：

关键词：

D O I：

10.1109/JSSC.1986.1052615

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：837 / 844

页数：8

共 12 条

[1] VELOCITY OF SURFACE CARRIERS IN INVERSION-LAYERS ON SILICON [J].

COEN, RW ;

MULLER, RS .

[2] MODELING OF MOS-TRANSISTORS WITH NON-RECTANGULAR-GATE GEOMETRIES [J].

GRIGNOUX, P ;

GEIGER, RL .

[3]

KUO JB, 1986, IEEE T ELECTRON DEVI, V33

[4]

KUO JB, 1986, FEB INT SOL STAT CIR, P158

[5]

Merckel G., 1977, Proceedings of the NATO Advanced Study Institute on Process and Device Modelling for Integrated Circuit Design, P705

[6]

PFIESTER J, 1984, THESIS STANFORD U ST

RICCO, B .

[8] SWITCH-INDUCED ERROR VOLTAGE ON A SWITCHED CAPACITOR [J].

SHEU, BJ ;

HU, C .

[9]

SUAREZ RE, 1975, IEEE J SOLID-ST CIRC, V10, P379, DOI 10.1109/JSSC.1975.1050630

[10]

TAKEDA E, 1985, MAY P S VLSI TECHN, P2