CHANGES IN CHEMICAL STABILITY OF ION-IMPLANTED SILICA GLASS

[1] [Anonymous], 1963, KGL DANSKE VIDENSKAB

[2] ARITOME H, 1973, J JPN SOC APPL PHY S, V42, P136

[3] Bayly A. R., 1973, Radiation Effects, V18, P111, DOI 10.1080/00337577308234725

[4] BAYLY AR, 1973, COMMUNICATION

[5] CHADDERTON LT, 1965, FISSION DAMAGE CRYST

[6] CHANDLER PJ, TO BE PUBLISHED

[7] ATOMIC-DISPLACEMENT MECHANISM IN ION-BOMBARDED SEMICONDUCTORS AND INSULATORS [J]. APPLIED PHYSICS LETTERS, 1975, 26 (09) : 499 - 501

[8] DURRANI SA, 1975, IAEA VIENNA, P207

[9] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5196 - 5205

[10] COMPACTION OF ION-IMPLANTED FUSED SILICA [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 167 - 174

[1] [Anonymous], 1963, KGL DANSKE VIDENSKAB

[2] ARITOME H, 1973, J JPN SOC APPL PHY S, V42, P136

[3] Bayly A. R., 1973, Radiation Effects, V18, P111, DOI 10.1080/00337577308234725

[4] BAYLY AR, 1973, COMMUNICATION

[5] CHADDERTON LT, 1965, FISSION DAMAGE CRYST

[6] CHANDLER PJ, TO BE PUBLISHED

[7] ATOMIC-DISPLACEMENT MECHANISM IN ION-BOMBARDED SEMICONDUCTORS AND INSULATORS [J]. APPLIED PHYSICS LETTERS, 1975, 26 (09) : 499 - 501

[8] DURRANI SA, 1975, IAEA VIENNA, P207

[9] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) : 5196 - 5205

[10] COMPACTION OF ION-IMPLANTED FUSED SILICA [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (01) : 167 - 174