A STUDY OF THE OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF GLOW-DISCHARGE-DEPOSITED FLUORINATED, HYDROGENATED AMORPHOUS-SILICON THIN-FILMS

被引：7

作者：

GANGULY, G

DE, SC

RAY, S

BARUA, AK

机构：

来源：

SOLAR ENERGY MATERIALS | 1988年 / 17卷 / 04期

关键词：

D O I：

10.1016/0165-1633(88)90052-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：237 / 245

页数：9

共 9 条

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[2]

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[3]

DE SC, 1988, IN PRESS THIN SOLID

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GANGULY, G ;

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OVSHINSKY, SR ;

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[6]

MATSUMURA H, 1963, J NONCRYST SOLIDS, V59, P739

[7] NEW AMORPHOUS SILICON-BASED ALLOY FOR ELECTRONIC APPLICATIONS [J].

OVSHINSKY, SR ;

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[8] NMR AND ELECTRON-SPIN-RESONANCE STUDIES ON ANNEALING EFFECTS IN ALPHA-SI-F-H AND ALPHA-SI-H [J].

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JOURNAL DE PHYSIQUE, 1981, 42 (NC4) :729-732

[9] GLOW-DISCHARGE ALPHA-SI-F PREPARED FROM SIF2 GAS [J].

WEIL, R ;

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