PROPERTIES OF COMPENSATED AND DOPED AMORPHOUS SIC AND GESI ALLOY-FILMS

被引：7

作者：

BANERJEE, PK ^{[1
]}

PEREIRA, JMT ^{[1
]}

MITRA, SS ^{[1
]}

DUTTA, R ^{[1
]}

机构：

[1] AT&T BELL LABS,RES LAB,HOLMDEL,NJ 07733

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1986年 / 87卷 / 1-2期

关键词：

D O I：

10.1016/S0022-3093(86)80064-3

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1 / 29

页数：29

共 41 条

[1] HOPPING CONDUCTIVITY IN DISORDERED SYSTEMS [J].

AMBEGAOKAR, V ;

HALPERIN, BI ;

LANGER, JS .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (08) :2612-+

[2] OPTICAL AND ELECTRICAL PROPERTIES OF BORON-IMPLANTED AMORPHOUS-GERMANIUM THIN-FILMS [J].

ANDERSON, GW ;

DAVEY, JE ;

COMAS, J ;

SAKS, NS ;

LUCKE, WH .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4528-4533

[3] PROPERTIES OF RF SPUTTERED HYDROGENATED AMORPHOUS GERMANIUM-SILICON ALLOYS [J].

BANERJEE, PK ;

DUTTA, R ;

MITRA, SS ;

PAUL, DK .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1982, 50 (01) :1-11

[4] RAMAN-SCATTERING IN PURE AND HYDROGENATED AMORPHOUS-GERMANIUM AND SILICON [J].

BERMEJO, D ;

CARDONA, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :405-419

[5] INFRARED-ABSORPTION IN HYDROGENATED AMORPHOUS AND CRYSTALLIZED GERMANIUM [J].

BERMEJO, D ;

CARDONA, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :421-430

[6]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[7]

BRODSKY MH, 1972, B AM PHYS SOC, V17, P322

[8]

CHITTICK RC, 1969, J ELECTROCHEM SOC, V77, P116

[9] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM [J].

CONNELL, GAN ;

PAWLIK, JR .

PHYSICAL REVIEW B, 1976, 13 (02) :787-804

[10] OPTICAL AND ELECTRICAL-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON CARBIDE [J].

DUTTA, R ;

BANERJEE, PK ;

MITRA, SS .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 113 (01) :277-284

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