共 7 条
[1]
CAMMASEL J, 1978, PHYS REV B, V17, P4718
[2]
PHOTO-VOLTAIC PROPERTIES OF SOME SEMICONDUCTING LAYER STRUCTURES
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1978, 49 (02)
:437-443
[4]
ELECTRICAL AND OPTICAL CHARACTERISTICS OF A SCHOTTKY-BARRIER ON A CLEAVED SURFACE OF THE LAYERED SEMICONDUCTOR INSE
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1982, 70 (02)
:615-621
[5]
ELECTRON-SCATTERING MECHANISMS IN N-TYPE INDIUM SELENIDE
[J].
PHYSICAL REVIEW B,
1984, 29 (10)
:5708-5717
[6]
INVESTIGATION OF IMPURITY LEVELS IN N-TYPE INDIUM SELENIDE BY MEANS OF HALL-EFFECT AND DEEP LEVEL TRANSIENT SPECTROSCOPY
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1983, 31 (03)
:139-145
[7]
ANNEALING BEHAVIOR OF ELECTRICAL-PROPERTIES OF N-INSE SINGLE-CRYSTALS
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1984, 86 (01)
:K69-K72