LATTICE-DEFECTS IN SEMICONDUCTORS - TOWARDS A FINITE-TEMPERATURE THEORY

[1] LINEAR METHODS IN BAND THEORY [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3060 - 3083

[2] Bachelet G. B., 1987, 18th International Conference on the Physics of Semiconductors, P801

[3] STRUCTURAL-ENERGY CALCULATIONS BASED ON NORM-CONSERVING PSEUDOPOTENTIALS AND LOCALIZED GAUSSIAN-ORBITALS [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4745 - 4752

[4] BACHELET GB, 1986, CRYSTALLINE SEMICOND, pCH7

[5] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979

[6] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852

[7] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3545 - 3562

[8] UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (22) : 2471 - 2474

[9] MONOVACANCY FORMATION ENTHALPY IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2195 - 2198

[10] ADEQUACY OF LATTICE-DYNAMICS FOR HIGH-TEMPERATURE POINT-DEFECT PROPERTIES [J]. PHYSICAL REVIEW B, 1986, 33 (03): : 1993 - 1996

[1] LINEAR METHODS IN BAND THEORY [J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3060 - 3083

[2] Bachelet G. B., 1987, 18th International Conference on the Physics of Semiconductors, P801

[3] STRUCTURAL-ENERGY CALCULATIONS BASED ON NORM-CONSERVING PSEUDOPOTENTIALS AND LOCALIZED GAUSSIAN-ORBITALS [J]. PHYSICAL REVIEW B, 1981, 24 (08): : 4745 - 4752

[4] BACHELET GB, 1986, CRYSTALLINE SEMICOND, pCH7

[5] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979

[6] ELECTRONIC-STRUCTURE AND TOTAL-ENERGY MIGRATION BARRIERS OF SILICON SELF-INTERSTITIALS [J]. PHYSICAL REVIEW B, 1984, 30 (04): : 1844 - 1852

[7] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .2. SELF-CONSISTENT FORMULATION AND APPLICATION TO THE VACANCY IN SILICON [J]. PHYSICAL REVIEW B, 1980, 21 (08): : 3545 - 3562

[8] UNIFIED APPROACH FOR MOLECULAR-DYNAMICS AND DENSITY-FUNCTIONAL THEORY [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (22) : 2471 - 2474

[9] MONOVACANCY FORMATION ENTHALPY IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (20) : 2195 - 2198

[10] ADEQUACY OF LATTICE-DYNAMICS FOR HIGH-TEMPERATURE POINT-DEFECT PROPERTIES [J]. PHYSICAL REVIEW B, 1986, 33 (03): : 1993 - 1996