AGGAS2 INFRARED PARAMETRIC OSCILLATOR

被引：152

作者：

FAN, YX

ECKARDT, RC

BYER, RL

ROUTE, RK

FEIGELSON, RS

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD,CA 94305

[2] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95275

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：313 / 315

页数：3

共 29 条

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[27] INFRARED RADIATION TUNABLE FROM 5.5 TO 18.3 MU-M GENERATED BY MIXING IN AGGAS2 [J].

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[28]

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[29] REFRACTIVE-INDEX BEHAVIOR OF TERNARY CHALCOPYRITE SEMICONDUCTORS [J].

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JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) :3597-3605

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