CO-POLYMERS OF TRIMETHYLSILYLSTYRENE WITH CHLOROMETHYLSTYRENE FOR A BI-LAYER RESIST SYSTEM

被引：56

作者：

SUZUKI, M ^{[1
]}

SAIGO, K ^{[1
]}

GOKAN, H ^{[1
]}

OHNISHI, Y ^{[1
]}

机构：

[1] NEC CORP,MICROELECTR RES LABS,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 09期

关键词：

D O I：

10.1149/1.2120132

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1962 / 1964

页数：3

共 11 条

[1]

BRANDRUP J, 1975, POLYM HDB, pR5

[2] DIRECTIONAL OXYGEN-ION-BEAM ETCHING OF CARBONACEOUS MATERIALS [J].

DEGRAFF, PD ;

FLANDERS, DC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1906-1908

[3] DRY ETCH RESISTANCE OF ORGANIC MATERIALS [J].

GOKAN, H ;

ESHO, S ;

OHNISHI, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) :143-146

[4]

HATZAKIS M, 1981, P INT C MICROLITHOGR, P396

[5]

LIN BJ, IEDM82391

[6]

MACDONALD SA, 1983, 1983 INT S EIPB LOS

[7] HIGH-RESOLUTION, STEEP PROFILE RESIST PATTERNS [J].

MORAN, JM ;

MAYDAN, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1620-1624

[8]

SHAW JM, 1982, 6TH P PHOT C SOC PLA, P285

[9]

SUZUKI M, 1982, 23RD P S SEM INT CIR, P18

[10]

Tai K. L., 1982, 1982 Symposium on VLSI Technology. Digest of Papers, P90

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