LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY OF ZNSE-BASED LIGHT-EMITTING-DIODES

We report on the growth and p- and n-doping of ZnSe with low-pressure metalorganic vapor phase epitaxy. The epitaxy of ZnSe was performed on semi-insulated and highly doped (001) GaAs substrates at a growth temperature of 340 degrees C. The reactor pressure was varied between 100 and 1000 hPa to improve the lateral homogeneity of the layer thickness. Optical and structural properties of the samples were determined with photoluminescence at 2 K and X-ray diffraction. For the doping experiments triallylamine and n-butylchlorine were applied. The achieved free carrier concentration was determined with C-V and Hall effect measurements. Both doping precursors were used for the fabrication of light emitting p/n junctions. Different types of light emitting diode (LED) structures were grown. Electroluminescence was excited with DC and pulsed current in the temperature range of 25 to 300 K.