CHARACTERIZATION OF CU(GA, IN)SE2 THIN-FILMS AND HETEROJUNCTIONS GROWN BY CLOSE-SPACED VAPOR TRANSPORT

被引：9

作者：

DJESSAS, K ^{[1
]}

MASSE, G ^{[1
]}

机构：

[1] UNIV PERPIGNAN,52 AVE VILLENEUVE,F-66860 PERPIGNAN,FRANCE

来源：

THIN SOLID FILMS | 1993年 / 232卷 / 02期

关键词：

D O I：

10.1016/0040-6090(93)90008-D

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CuGaxIn1-xSe2 polycrystalline thin films were grown by a simple technique using close-spaced vapour transport in closed tubes with iodine as a reagent. The depositions were carried out at temperatures below 600-degrees-C. Glass or molybdenum substrates could be used. The samples were characterized by X-ray, electron microprobe and scanning electron microscopy measurements. The optimal conditions for depositing good quality thin films were determined. The thin film resistivities, carrier densities and mobilities were deduced from Hall effect measurements. The energy gaps were calculated from optical absorption experiments at 77 and 300 K. The experimental conditions for depositing Cu(Ga, In)Se2-(Cd, Zn)S heterojunctions are discussed.

引用

页码：194 / 200

页数：7

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