LOW-THRESHOLD GAINASP-INP MESA LASERS

被引：4

作者：

LOGAN, RA

HENRY, CH

VANDERZIEL, JP

TEMKIN, H

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 18期

关键词：

D O I：

10.1049/el:19820528

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：782 / 783

页数：2

共 7 条

[1] LIMITATIONS OF POWER OUTPUTS FROM CONTINUOUSLY OPERATING GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS [J].

CHINONE, N ;

ITO, R ;

NAKADA, O .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :785-786

[2] GROWTH AND CHARACTERISTICS OF GALN ASP-INP DOUBLE HETEROSTRUCTURE LASERS [J].

GREENE, PD ;

HENSHALL, GD .

IEE JOURNAL ON SOLID-STATE AND ELECTRON DEVICES, 1979, 3 (06) :174-178

[3]

HIRAO M, 1980, J APPL PHYS, V51, P4339

[4]

KISHINO K, 1979, ELECTRON LETT, V15, P134, DOI 10.1049/el:19790098

[5] INGAASP PLANAR BURIED HETEROSTRUCTURE LASER DIODE (PBH-LD) WITH VERY LOW THRESHOLD CURRENT [J].

MITO, I ;

KITAMURA, M ;

KAEDE, K ;

ODAGIRI, Y ;

SEKI, M ;

SUGIMOTO, M ;

KOBAYASHI, K .

ELECTRONICS LETTERS, 1982, 18 (01) :2-3

[6] VERY-LOW-CURRENT OPERATION OF MESA-STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

TSUKADA, T ;

UMEDA, J ;

NAKADA, O ;

CHINONE, N ;

ITO, R ;

NAKASHIM.H ;

NAKAMURA, S .

APPLIED PHYSICS LETTERS, 1972, 20 (09) :344-&

[7] DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTURE [J].

YAMAKOSHI, S ;

SANADA, T ;

WADA, O ;

UMEBU, I ;

SAKURAI, T .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :144-146

← 1 →