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SURFACE-CHARGE EFFECTS ON PLANAR SUBMICROMETER GAAS AND INP DEVICES

被引：3
作者：
BRU, C
DECARNE, P
DANSAS, P
PASCAL, D
ROUSSEAU, M
LAVAL, S
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 08期
关键词：
D O I：
10.1109/T-ED.1987.23128
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1611 / 1616
页数：6
相关论文
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[5]   TWO-DIMENSIONAL PARTICLE MODELING OF SUBMICROMETER GATE GAAS-FET NEAR PINCHOFF [J].
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[6]  
WIEDER HH, 1980, I PHYS C SER, V50, P234
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