EFFECTS IN THE PRESENCE OF DEEP CENTERS ON AN FET-TYPE DEVICE WITH BUFFER LAYER

被引：2

作者：

DANSAS, P

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 60卷 / 02期

关键词：

D O I：

10.1002/pssa.2210600235

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：631 / 639

页数：9

共 17 条

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