GROWTH OF GAN FILMS USING TRIMETHYLGALLIUM AND HYDRAZINE

[1] LOW-TEMPERATURE GROWTH OF GALLIUM NITRIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L545 - L548

[2] EFFECTS OF HYDROGEN IN AN AMBIENT ON THE CRYSTAL-GROWTH OF GAN USING GA(CH3)3 AND NH3 [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 163 - 168

[3] EQUILIBRIUM PRESSURE OF N-2 OVER GAN AND HIGH-PRESSURE SOLUTION GROWTH OF GAN [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) : 1 - 10

[4] KARPINSKI J, 1982, J CRYST GROWTH, V56, P77, DOI 10.1016/0022-0248(82)90014-8

[5] GAN BLUE-LIGHT EMITTING DIODES PREPARED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2367 - 2368

[6] ELECTRICAL-PROPERTIES AND ION-IMPLANTATION OF EPITAXIAL GAN, GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 430 - 432

[7] GROWTH KINETICS AND CATALYTIC EFFECTS IN VAPOR-PHASE EPITAXY OF GALLIUM NITRIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1161 - 1169

[8] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1864 - +

[9] CO-ORDINATION COMPOUNDS OF HYDRAZINE .2. INTERACTION OF TRIMETHYLBORANE AND TRIMETHYLALUMINUM WITH HYDRAZINE [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1961, 39 (11): : 2324 - &

[10] DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 675 - 680

[1] LOW-TEMPERATURE GROWTH OF GALLIUM NITRIDE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (07) : L545 - L548

[2] EFFECTS OF HYDROGEN IN AN AMBIENT ON THE CRYSTAL-GROWTH OF GAN USING GA(CH3)3 AND NH3 [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 163 - 168

[3] EQUILIBRIUM PRESSURE OF N-2 OVER GAN AND HIGH-PRESSURE SOLUTION GROWTH OF GAN [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 66 (01) : 1 - 10

[4] KARPINSKI J, 1982, J CRYST GROWTH, V56, P77, DOI 10.1016/0022-0248(82)90014-8

[5] GAN BLUE-LIGHT EMITTING DIODES PREPARED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) : 2367 - 2368

[6] ELECTRICAL-PROPERTIES AND ION-IMPLANTATION OF EPITAXIAL GAN, GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 430 - 432

[7] GROWTH KINETICS AND CATALYTIC EFFECTS IN VAPOR-PHASE EPITAXY OF GALLIUM NITRIDE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (07) : 1161 - 1169

[8] USE OF METALORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .4. NITRIDES OF ALUMINUM AND GALLIUM [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) : 1864 - +

[9] CO-ORDINATION COMPOUNDS OF HYDRAZINE .2. INTERACTION OF TRIMETHYLBORANE AND TRIMETHYLALUMINUM WITH HYDRAZINE [J]. CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1961, 39 (11): : 2324 - &

[10] DEPOSITION OF GAAS EPITAXIAL LAYERS BY ORGANOMETALLIC CVD - TEMPERATURE AND ORIENTATION DEPENDENCE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (03) : 675 - 680