LOCAL BONDING CONFIGURATION OF PHOSPHORUS IN DOPED AND COMPENSATED AMORPHOUS HYDROGENATED SILICON

被引：54

作者：

REIMER, JA

DUNCAN, TM

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1983年 / 27卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.27.4895

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4895 / 4901

页数：7

共 26 条

[1]

ABRAGAM A, 1961, PRINCIPLES NUCLEAR M

[2]

ANDREW ER, 1972, PROGR NMR SPECTROSCO, V8, P1

[3] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J].

BIEGELSEN, DK ;

STREET, RA ;

TSAI, CC ;

KNIGHTS, JC .

PHYSICAL REVIEW B, 1979, 20 (12) :4839-4846

[4] MAGNETIC-PROPERTIES OF ELECTRONS AND HOLES IN METALLIC SI-P AND SI-B [J].

BROWN, GC ;

HOLCOMB, DF .

PHYSICAL REVIEW B, 1974, 10 (08) :3394-3401

[5] THE ROLE OF HYDROGEN IN HEAVILY DOPED AMORPHOUS-SILICON [J].

CARLSON, DE ;

SMITH, RW ;

MAGEE, CW ;

ZANZUCCHI, PJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (01) :51-68

[6] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J].

CHITTICK, RC ;

ALEXANDE.JH ;

STERLING, HF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :77-&

[7] DIRECT MEASUREMENT OF THE BULK-DENSITY OF GAP STATES IN N-TYPE HYDROGENATED AMORPHOUS-SILICON [J].

COHEN, JD ;

LANG, DV ;

HARBISON, JP .

PHYSICAL REVIEW LETTERS, 1980, 45 (03) :197-200

[8]

CROWLEY AH, 1971, J AM CHEM SOC, V93, P6815

[9]

Crutchfield M.M., 1967, TOPICS PHOSPHORUS CH, V5

[10] DIFFUSION IN PARAFFIN HYDROCARBONS [J].

DOUGLASS, DC ;

MCCALL, DW .

JOURNAL OF PHYSICAL CHEMISTRY, 1958, 62 (09) :1102-1107

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