LIGHT-INDUCED DEFECT GENERATION IN HYDROGENATED AMORPHOUS-SILICON UNDER THE CONSTANT PHOTOCURRENT CONDITIONS

We measured the decay of the steady state photoconductivity in a-Si:H due to light soaking under the constant photocurrent condition, in which the light intensity was increased to keep the photocurrent constant and the photoconductivity was measured at a preset light intensity. The results are discussed in terms of the Stutzmann's model and the model of Redfield and Bube. We have found that Redfield and Bube's equation in a modified form including carrier enhanced dispersion may be used to describe light-induced defect generation.