SUBMICROMETER FET GATE FABRICATION USING RESISTLESS AND FOCUSED ION-BEAM TECHNIQUES

被引：3

作者：

RENSCH, DB

CHEN, JY

CLARK, WM

COURTNEY, MD

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：286 / 289

页数：4

共 13 条

[1] PASSIVATION AND MASKLESS PROCESSING WITH ANISOTROPIC ETCHES IN SILICON [J].

DAY, DJ ;

MIDDLETON, GWR ;

JANES, TW ;

WHITE, JC ;

MIFSUD, VJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (02) :407-410

[2]

HENDERSON RC, 1979, J VAC SCI TECHNOL, V6, P260

[3]

KERN W, 1978, RCA REV, V39, P278

[4] HIGH-RESOLUTION SPUTTERING USING A FOCUSED ION-BEAM [J].

KUBENA, RL ;

SELIGER, RL ;

STEVENS, EH .

THIN SOLID FILMS, 1982, 92 (1-2) :165-169

[5]

KUBENA RL, 1983, INT ELECTRONIC DEVIC

[6] FOCUSED ION-BEAM MICROLITHOGRAPHY USING AN ETCH-STOP PROCESS IN GALLIUM-DOPED SILICON [J].

LAMARCHE, PH ;

LEVISETTI, R ;

WANG, YL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04) :1056-1058

[7] SELF-ALIGNED SUB-MICRON GATE DIGITAL GAAS INTEGRATED-CIRCUITS [J].

LEVY, HM ;

LEE, RE .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) :102-104

[8] BOMBARDMENT-INDUCED CORROSION-RESISTANCE OF ALUMINUM [J].

PANKOVE, JI ;

MCGINN, JT ;

WU, CP .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :119-121

[9] SILICON AS A MECHANICAL MATERIAL [J].

PETERSEN, KE .

PROCEEDINGS OF THE IEEE, 1982, 70 (05) :420-457

[10]

Price J. B., 1973, SEMICONDUCTOR SILICO, P339

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