PASSIVATION AND MASKLESS PROCESSING WITH ANISOTROPIC ETCHES IN SILICON

被引：5

作者：

DAY, DJ

MIDDLETON, GWR

JANES, TW

WHITE, JC

MIFSUD, VJ

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1984年 / 131卷 / 02期

关键词：

D O I：

10.1149/1.2115595

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：407 / 410

页数：4

共 10 条

[1] ANISOTROPIC ETCHING OF SILICON [J].

BEAN, KE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (10) :1185-1193

[2]

BOGH A, 1971, J ELECTROCHEM SOC, V118, P401

[3] PREPARATION OF LARGE-AREA MONO-CRYSTALLINE SILICON THIN WINDOWS [J].

CHEUNG, NW .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (09) :1212-1216

[4]

DAY DJ, UNPUB J PHYS D

[5] THE ROLE OF SURFACE IRREGULARITIES (STEPS, KINKS) AND POINT-DEFECTS ON THE CHEMICAL-REACTIVITY OF SOLID-SURFACES [J].

FERRER, S ;

ROJO, JM ;

SALMERON, M ;

SOMORJAI, GA .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 45 (02) :261-269

[6]

JANES TW, 1982, ESSDERC

[7] STUDY OF THE ETCH-STOP MECHANISM IN SILICON [J].

PALIK, ED ;

FAUST, JW ;

GRAY, HF ;

GREENE, RF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2051-2059

[8] SILICON AS A MECHANICAL MATERIAL [J].

PETERSEN, KE .

PROCEEDINGS OF THE IEEE, 1982, 70 (05) :420-457

[9] ELECTROCHEMICALLY CONTROLLED THINNING OF SILICON [J].

WAGGENER, HA .

BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (03) :473-+

[10]

1982, Patent No. 8235658

← 1 →