INDIUM-ANTIMONIDE LAYER GROWN ON SEMIINSULATING GAAS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

An indium antimonide single crystal is epitaxially grown on a semi-insulating GaAs. Layer thickness is changed from 0. 15 to 4.2-mu-m. The X-ray diffraction peak (400) position does not change much with thickness, while its width decreases with increasing thickness. Crystal orientation is (100) from the early stage, and its crystallinity improves with thickness, The 300 K mobility increases from 940 to 25000 cm2/V.s and carrier concentration decreases from 1.1 x 10(18) to 8.0 x 10(16) cm-3 with thickness. Their dependence on thickness and temperature indicates that lattice scattering, ionized impurity scattering and defect-related scattering all contribute to limiting the mobility.