HIGH-MOBILITY INSB GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引:60
作者
GASKILL, DK
STAUF, GT
BOTTKA, N
机构
[1] Naval Research Laboratory, Washington
关键词
D O I
10.1063/1.105069
中图分类号
O59 [应用物理学];
学科分类号
摘要
The highest mobility InSb epilayer grown to date by organometallic vapor phase epitaxy has been achieved by utilizing high-purity organometallic sources, choosing a reactor geometry to reproducibly control the source concentrations above the substrate, and using a high-integrity reactor system. On a p-type InSb substrate, an unintentionally doped layer had a 77 K n-type carrier concentration and mobility of 1.4 X 10(15) cm-3 and 2.53 X 10(5) cm2/V s. Growths on GaAs substrates were greatly affected by the lattice mismatch and had 77 K carrier concentrations similar to the InSb case but with mobilities of (5.0-9.0) X 10(4) cm2/V s. The crystal quality, morphology, and cyclotron resonance characteristics are reported and found to be comparable to state-of-the-art molecular beam epitaxy layers.
引用
收藏
页码:1905 / 1907
页数:3
相关论文
共 11 条
[1]   DOPING AND P-N-JUNCTION FORMATION IN INAS1-XSBX/INSB SLSS BY MOCVD [J].
BIEFELD, RM ;
KURTZ, SR ;
FRITZ, IJ .
JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (06) :775-780
[2]   THE PREPARATION OF INSB AND INAS1-XSBX BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
BIEFELD, RM .
JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) :255-263
[3]  
BIEFELD RM, COMMUNICATION
[4]   GROWTH OF INSB AND INAS1-XSBX BY OM-CVD [J].
CHIANG, PK ;
BEDAIR, SM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2422-2426
[5]  
CHIANG PK, 1985, THESIS N CAROLINA ST
[6]   GROWTH-CHARACTERISTICS OF LPE INSB AND INGASB [J].
HOLMES, DE ;
KAMATH, GS .
JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (01) :95-110
[7]   CYCLOTRON-RESONANCE CHARACTERIZATION OF ION-IMPLANTED CARRIERS IN SEMICONDUCTORS [J].
KAPLAN, R ;
WAGNER, RJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :899-902
[8]  
MA KY, 1989, APPL PHYS LETT, V55, P2422
[9]   DISTRIBUTION COEFFICIENTS AND CARRIER MOBILITIES IN INSB [J].
STRAUSS, AJ .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :559-563
[10]  
Sze S. M., 1981, PHYSICS SEMICONDUCTO, P34