DOPING AND P-N-JUNCTION FORMATION IN INAS1-XSBX/INSB SLSS BY MOCVD

[1] MOCVD OF INDIUM-PHOSPHIDE AND INDIUM GALLIUM-ARSENIDE USING TRIMETHYLINDIUM-TRIMETHYLAMINE ADDUCTS [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) : 221 - 226

[2] STRAIN RELIEF IN COMPOSITIONALLY GRADED INASXSB1-X BUFFER LAYERS AND INASXSB1-X/INSB STRAINED-LAYER SUPERLATTICES GROWN BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 91 (04) : 515 - 526

[3] NOVEL INSB PHOTOCHEMICAL NATIVE OXIDE INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2813 - 2815

[4] THE INFLUENCE OF GROWTH CHEMISTRY ON THE MOVPE GROWTH OF GAAS AND ALXGA1-XAS LAYERS AND HETEROSTRUCTURES [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 257 - 271

[5] Kurtz S. R., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V930, P101, DOI 10.1117/12.946631

[6] HIGH PHOTOCONDUCTIVE GAIN IN LATERAL INASSB STRAINED-LAYER SUPERLATTICE INFRARED DETECTORS [J]. APPLIED PHYSICS LETTERS, 1988, 53 (20) : 1961 - 1963

[7] LONG-WAVELENGTH INASSB STRAINED-LAYER SUPERLATTICE PHOTOVOLTAIC INFRARED DETECTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) : 150 - 152

[8] DEMONSTRATION OF AN INASSB STRAINED-LAYER SUPERLATTICE PHOTODIODE [J]. APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1581 - 1583

[9] EXTENDED INFRARED RESPONSE OF INASSB STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 831 - 833

[10] PHOTOLUMINESCENCE AND THE BAND-STRUCTURE OF INASSB STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 216 - 218

[1] MOCVD OF INDIUM-PHOSPHIDE AND INDIUM GALLIUM-ARSENIDE USING TRIMETHYLINDIUM-TRIMETHYLAMINE ADDUCTS [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) : 221 - 226

[2] STRAIN RELIEF IN COMPOSITIONALLY GRADED INASXSB1-X BUFFER LAYERS AND INASXSB1-X/INSB STRAINED-LAYER SUPERLATTICES GROWN BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 91 (04) : 515 - 526

[3] NOVEL INSB PHOTOCHEMICAL NATIVE OXIDE INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2813 - 2815

[4] THE INFLUENCE OF GROWTH CHEMISTRY ON THE MOVPE GROWTH OF GAAS AND ALXGA1-XAS LAYERS AND HETEROSTRUCTURES [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 257 - 271

[5] Kurtz S. R., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V930, P101, DOI 10.1117/12.946631

[6] HIGH PHOTOCONDUCTIVE GAIN IN LATERAL INASSB STRAINED-LAYER SUPERLATTICE INFRARED DETECTORS [J]. APPLIED PHYSICS LETTERS, 1988, 53 (20) : 1961 - 1963

[7] LONG-WAVELENGTH INASSB STRAINED-LAYER SUPERLATTICE PHOTOVOLTAIC INFRARED DETECTORS [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (04) : 150 - 152

[8] DEMONSTRATION OF AN INASSB STRAINED-LAYER SUPERLATTICE PHOTODIODE [J]. APPLIED PHYSICS LETTERS, 1988, 52 (19) : 1581 - 1583

[9] EXTENDED INFRARED RESPONSE OF INASSB STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (10) : 831 - 833

[10] PHOTOLUMINESCENCE AND THE BAND-STRUCTURE OF INASSB STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 216 - 218