CASCADABLE, LATCHING PHOTONIC SWITCH WITH HIGH OPTICAL GAIN BY THE MONOLITHIC INTEGRATION OF A VERTICAL-CAVITY SURFACE-EMITTING LASER AND A PN-PN PHOTOTHYRISTOR

被引:25
作者
ZHOU, P [1 ]
CHENG, JL [1 ]
SCHAUS, CF [1 ]
SUN, SZ [1 ]
HAINS, C [1 ]
ZHENG, K [1 ]
ARMOUR, E [1 ]
HSIN, W [1 ]
MYERS, DR [1 ]
VAWTER, GA [1 ]
机构
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
关键词
D O I
10.1109/68.97844
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report the first demonstration of a cascadable photonic switch based on the monolithic integration of a multi-quantum-well vertical-cavity surface-emitting laser (VCSEL) and a latching pn-pn photothyristor grown by LP-MOCVD. The VCSEL and pn-pn photothyristor structures can be independently optimized for optical switching, logic and memory functions. Optical switching with high gain (30 000), high contrast (30 dB), low switching power (11 nW), and latching memory have been demonstrated.
引用
收藏
页码:1009 / 1012
页数:4
相关论文
共 11 条
  • [1] CASCADABLE SURFACE-EMITTING LASER LOGIC - DEMONSTRATION OF BOOLEAN LOGIC
    BRYAN, RP
    OLBRIGHT, GR
    CHENG, J
    [J]. ELECTRONICS LETTERS, 1991, 27 (11) : 893 - 894
  • [2] CAMPBELL JC, 1981, IEEE J QUANTUM ELECT, V17, P264, DOI 10.1109/JQE.1981.1071072
  • [3] OPTICALLY CONTROLLED SURFACE-EMITTING LASERS
    CHAN, WK
    HARBISON, JP
    VONLEHMEN, AC
    FLOREZ, LT
    NGUYEN, CK
    SCHWARZ, SA
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (21) : 2342 - 2344
  • [4] CHENG J, 1991, P OSA TOP M OPT COMP, V6, P10
  • [5] INTEGRATION OF 1024 INGAASP INP OPTOELECTRONIC BISTABLE SWITCHES
    MATSUDA, K
    TAKIMOTO, K
    LEE, DH
    SHIBATA, J
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (07) : 1630 - 1634
  • [6] SURFACE-EMITTING LASER OPERATION IN VERTICAL-TO-SURFACE TRANSMISSION ELECTROPHOTONIC DEVICES WITH A VERTICAL CAVITY
    NUMAI, T
    SUGIMOTO, M
    OGURA, I
    KOSAKA, H
    KASAHARA, K
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1250 - 1252
  • [7] RECONFIGURABLE OPTICAL INTERCONNECTION USING A 2-DIMENSIONAL VERTICAL TO SURFACE TRANSMISSION ELECTROPHOTONIC DEVICE ARRAY
    OGURA, I
    TASHIRO, Y
    KAWAI, S
    YAMADA, K
    SUGIMOTO, M
    KUBOTA, K
    KASAHARA, K
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (06) : 540 - 542
  • [8] HIGH-CURRENT INGAASP-INP PHOTOTRANSISTORS AND SOME MONOLITHIC OPTICAL-DEVICES
    SASAKI, A
    MATSUDA, K
    KIMURA, Y
    FUJITA, S
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1382 - 1388
  • [9] INTEGRATED LASER PHOTOTRANSISTOR OPTOELECTRONIC SWITCHING DEVICE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
    SCHAUS, CF
    SHEALY, JR
    NAJJAR, FE
    EASTMAN, LF
    [J]. ELECTRONICS LETTERS, 1986, 22 (09) : 454 - 456
  • [10] SZE SM, 1981, PHYSICS SEMICONDUCTO, P200