STRAINED-LAYER IN1-XAS/GAAS AND INXGA1-XAS/INYGA1-YP MULTIPLE-QUANTUM-WELL OPTICAL MODULATORS GROWN BY GAS-SOURCE MBE

被引：6

作者：

KIM, JW ^{[1
]}

CHEN, CW ^{[1
]}

VOGT, TJ ^{[1
]}

WOODS, LM ^{[1
]}

ROBINSON, GY ^{[1
]}

LILE, DL ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.257167

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first results on low-power p-i-n diode modulator structures using strained multiple quantum wells (MQW's) of InGaAs/InGaP grown by gas-source molecular beam epitaxy (MBE) on GaAs are presented. A comparison of transmission, reflection, and photocurrent spectra for these nonresonant devices with those fabricated from InGaAs/GaAs indicates larger modulation, with a maximum change in reflection of > 42% observed at 5-V bias at a wavelength of 0.96 mum.

引用

页码：987 / 989

页数：3

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