THE EFFECT OF STRAIN ON THE INTERDIFFUSION IN INGAAS/GAAS QUANTUM-WELLS

被引：70

作者：

RYU, SW ^{[1
]}

KIM, I ^{[1
]}

CHOE, BD ^{[1
]}

JEONG, WG ^{[1
]}

机构：

[1] SUNGKYUNKWAN UNIV,DEPT MAT ENGN,SUWON,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 10期

关键词：

D O I：

10.1063/1.114512

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of strain on the cation interdiffusion in InGaAs/GaAs quantum wells is described. It is found that the Fick's diffusion equation does not properly describe the interdiffusion in the heterostructure with strained layers. It is believed that the strain changes crystal defect concentration and thus diffusivity is influenced by strain. Diffusion equation including the strain effect is formulated and solved numerically. The experimental photoluminescence peak shifts as a function of annealing time are well-fitted by this analysis and useful parameters such as diffusivity describing InGaAs/GaAs quantum well interdiffusion are extracted. (C) 1995 American Institute of Physics.

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页码：1417 / 1419

页数：3

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