IMPURITY DIFFUSION ENHANCEMENT OF INTERDIFFUSION IN AN INGAPAS-GAAS HETEROSTRUCTURE

被引:15
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LEE, KH
PARK, HH
STEVENSON, DA
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10.1063/1.343039
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O59 [应用物理学];
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页码:1048 / 1052
页数:5
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共 26 条
[1]   ELECTRONIC-STRUCTURE, TOTAL ENERGIES, AND ABUNDANCES OF THE ELEMENTARY POINT-DEFECTS IN GAAS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW LETTERS, 1985, 55 (12) :1327-1330
[2]   IMPURITY INDUCED DISORDERING OF STRAINED GAP-GAAS1-XPX(X-APPROXIMATELY-0.6) SUPER-LATTICES [J].
CAMRAS, MD ;
HOLONYAK, N ;
HESS, K ;
LUDOWISE, MJ ;
DIETZE, WT ;
LEWIS, CR .
APPLIED PHYSICS LETTERS, 1983, 42 (02) :185-187
[3]  
CASEY HC, 1968, T METALL SOC AIME, V242, P406
[4]   DEPENDENCE OF DIFFUSION COEFFICIENT ON FERMI LEVEL - ZINC IN GALLIUM ARSENIDE [J].
CASEY, HC ;
PANISH, MB ;
CHANG, LL .
PHYSICAL REVIEW, 1967, 162 (03) :660-+
[5]   DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].
COLEMAN, JJ ;
DAPKUS, PD ;
KIRKPATRICK, CG ;
CAMRAS, MD ;
HOLONYAK, N .
APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906
[6]   SENSITIVITY OF SI DIFFUSION IN GAAS TO COLUMN-IV AND COLUMN-VI DONOR SPECIES [J].
DEPPE, DG ;
HOLONYAK, N ;
BAKER, JE .
APPLIED PHYSICS LETTERS, 1988, 52 (02) :129-131
[7]   IMPURITY-INDUCED LAYER DISORDERING OF HIGH GAP INY(ALXGA1-X)1-YP HETEROSTRUCTURES [J].
DEPPE, DG ;
NAM, DW ;
HOLONYAK, N ;
HSIEH, KC ;
BAKER, JE ;
KUO, CP ;
FLETCHER, RM ;
OSENTOWSKI, TD ;
CRAFORD, MG .
APPLIED PHYSICS LETTERS, 1988, 52 (17) :1413-1415
[8]   DIFFUSION OF ZINC IN GALLIUM-ARSENIDE - A NEW MODEL [J].
GOSELE, U ;
MOREHEAD, F .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4617-4619
[9]   DIFFUSION OF SILICON IN GALLIUM-ARSENIDE USING RAPID THERMAL-PROCESSING - EXPERIMENT AND MODEL [J].
GREINER, ME ;
GIBBONS, JF .
APPLIED PHYSICS LETTERS, 1984, 44 (08) :750-752
[10]   IR-RED GAAS-ALAS SUPER-LATTICE LASER MONOLITHICALLY INTEGRATED IN A YELLOW-GAP CAVITY [J].
HOLONYAK, N ;
LAIDIG, WD ;
CAMRAS, MD ;
COLEMAN, JJ ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :102-104