LINESHAPE OF INTER-SUBBAND OPTICAL-TRANSITIONS IN SPACE-CHARGE LAYERS

[31] ELECTRON EXCHANGE ENERGY IN SI INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1973, 30 (07) : 278 - 280

[32] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &

[33] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[34] CALCULATED ENERGY-LEVELS AND OPTICAL-ABSORPTION IN N-TYPE SI ACCUMULATION LAYERS AT LOW-TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (16) : 960 - 963

[35] STERN F, 1974, JPN J APPL PHYS S, V2, P323

[36] EFFECT OF ELECTRON-ELECTRON INTERACTION ON EXCITATION-ENERGIES OF AN N-INVERSION LAYER ON SI [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (09) : 598 - 601

[37] WHEELER RE, TO BE PUBLISHED

[31] ELECTRON EXCHANGE ENERGY IN SI INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1973, 30 (07) : 278 - 280

[32] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &

[33] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &

[34] CALCULATED ENERGY-LEVELS AND OPTICAL-ABSORPTION IN N-TYPE SI ACCUMULATION LAYERS AT LOW-TEMPERATURE [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (16) : 960 - 963

[35] STERN F, 1974, JPN J APPL PHYS S, V2, P323

[36] EFFECT OF ELECTRON-ELECTRON INTERACTION ON EXCITATION-ENERGIES OF AN N-INVERSION LAYER ON SI [J]. PHYSICAL REVIEW LETTERS, 1975, 35 (09) : 598 - 601

[37] WHEELER RE, TO BE PUBLISHED