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THEORETICAL DESCRIPTION OF TUNNELING MIS DEVICE TRANSPORT
被引:8
作者
:
BUXO, J
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,AUTOM & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE
CNRS,AUTOM & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE
BUXO, J
[
1
]
ESTEVE, D
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,AUTOM & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE
CNRS,AUTOM & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE
ESTEVE, D
[
1
]
SARRABAYROUSE, G
论文数:
0
引用数:
0
h-index:
0
机构:
CNRS,AUTOM & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE
CNRS,AUTOM & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE
SARRABAYROUSE, G
[
1
]
机构
:
[1]
CNRS,AUTOM & ANAL SYST LAB,F-31400 TOULOUSE,FRANCE
来源
:
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
|
1976年
/ 37卷
/ 01期
关键词
:
D O I
:
10.1002/pssa.2210370168
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:K105 / K110
页数:6
相关论文
共 5 条
[1]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
: 1589
-
+
[2]
DIRECT CURRENTS THROUGH INTERFACE STATES IN METAL-SEMICONDUCTOR CONTACTS
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
CARD, HC
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(10)
: 881
-
883
[3]
EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
RHODERICK, EH
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(03)
: 365
-
374
[4]
GREEN MA, 1974, SOLID STATE ELECTRON, V17, P559
[5]
TUNNELING TO TRAPS IN INSULATORS
LUNDSTROM, I
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
LUNDSTROM, I
SVENSSON, C
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
SVENSSON, C
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(12)
: 5045
-
5047
←
1
→
共 5 条
[1]
STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
RHODERICK, EH
[J].
JOURNAL OF PHYSICS D-APPLIED PHYSICS,
1971,
4
(10)
: 1589
-
+
[2]
DIRECT CURRENTS THROUGH INTERFACE STATES IN METAL-SEMICONDUCTOR CONTACTS
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA
CARD, HC
[J].
SOLID-STATE ELECTRONICS,
1975,
18
(10)
: 881
-
883
[3]
EFFECT OF AN INTERFACIAL LAYER ON MINORITY-CARRIER INJECTION IN FORWARD-BIASED SILICON SCHOTTKY DIODES
CARD, HC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
CARD, HC
RHODERICK, EH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
UNIV MANCHESTER, INST SCI & TECHNOL, DEPT ELECTR ENGN & ELECTR, MANCHESTER, LANCASTERSHIRE, ENGLAND
RHODERICK, EH
[J].
SOLID-STATE ELECTRONICS,
1973,
16
(03)
: 365
-
374
[4]
GREEN MA, 1974, SOLID STATE ELECTRON, V17, P559
[5]
TUNNELING TO TRAPS IN INSULATORS
LUNDSTROM, I
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
LUNDSTROM, I
SVENSSON, C
论文数:
0
引用数:
0
h-index:
0
机构:
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
CHALMERS UNIV TECHNOL, RES LAB ELECTR, GOTHENBURG, SWEDEN
SVENSSON, C
[J].
JOURNAL OF APPLIED PHYSICS,
1972,
43
(12)
: 5045
-
5047
←
1
→