BLUE EMISSION OF POROUS SILICON

被引：62

作者：

LEE, MK

PENG, KR

机构：

[1] Institute of Electrical Engineering, National Sun Yat-Sen University, Kaohsiung

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermally treated porous silicon shows blue photoluminescence (400-520 nm) excited by a He-Cd laser (320 nm) at room temperature. Stable and uniform Schottky blue light emitting diodes have been fabricated from thermally treated porous silicon in this work. The emission of blue light may be explained by the wide optical energy band gap attributed to the quantum wire effect.

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收藏

页码：3159 / 3160

页数：2

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