SURFACE CLEANING OF SI-DOPED UNDOPED GAAS SUBSTRATES

被引：17

作者：

GOTO, S

YAMADA, M

NOMURA, Y

机构：

[1] Optoelectronics Technology Research Laboratory, Tsukuba, IB, 300-26

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 9B期

关键词：

GAAS; DOPANTS; SURFACE CLEANING; SURFACE MORPHOLOGY; HYDROGEN RADICALS; AFM; SIMS;

D O I：

10.1143/JJAP.34.L1180

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It was found that the surface morphology and residual impurities after substrate-cleaning processes are influenced by the existence of a Si dopant in a GaAs (001) substrate, Atomic-force microscopy observations have revealed that the surface of an undoped substrate after conventional thermal cleaning under an As-4 flux is smoother than that of a Si-doped substrate. The surface roughness of Si-doped substrates was greatly improved by cleaning using hydrogen radicals (H .). Furthermore, secondary ion mass spectrometry revealed that the concentrations of residual carbon and oxygen on a H .-cleaned surface were also markedly reduced on undoped substrates, compared to those on Si-doped substrates.

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页码：L1180 / L1183

页数：4

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