共 19 条
[1]
SELF-CONSISTENT CALCULATIONS OF THE ELECTRONIC-STRUCTURE FOR IDEAL GA AND AS VACANCIES IN GAAS
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PHYSICAL REVIEW B,
1981, 24 (02)
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[2]
STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYS
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PHYSICAL REVIEW B,
1981, 24 (04)
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[3]
AN ENERGY SCHEME FOR INTERPRETING DEEP-LEVEL PHOTOCONDUCTIVITY AND OTHER RECENT OPTICAL MEASUREMENT FOR FE-DOPED INP
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1981, 14 (33)
:5063-5068
[4]
ELECTRONIC-STRUCTURE OF NEUTRAL AND NEGATIVELY CHARGED GALLIUM VACANCIES IN GAP
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1982, 15 (02)
:L1-L3
[5]
STUDIES OF DEEP CHROMIUM ACCEPTOR LEVELS IN INP
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1981, 14 (15)
:2135-2146
[6]
STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1979, 12 (23)
:5145-5155
[7]
Griffith J. S., 1971, THEORY TRANSITION ME
[8]
TRENDS IN THE ELECTRONIC-PROPERTIES OF SUBSTITUTIONAL 3D TRANSITION-METAL IMPURITIES IN GAAS
[J].
PHYSICAL REVIEW B,
1980, 22 (10)
:4590-4599
[9]
ELECTRONIC STATES OF A SUBSTITUTIONAL CHROMIUM IMPURITY IN GAAS
[J].
PHYSICAL REVIEW B,
1979, 20 (04)
:1527-1537
[10]
ELECTRONIC STATES OF SIMPLE-TRANSITION-METAL IMPURITIES IN SILICON
[J].
PHYSICAL REVIEW B,
1977, 15 (02)
:834-839