ELECTRONIC STATES OF SELECTED DEEP LEVEL DEFECTS IN III-V SEMICONDUCTORS

被引:12
作者
HEMSTREET, LA
机构
来源
PHYSICA B & C | 1983年 / 116卷 / 1-3期
关键词
D O I
10.1016/0378-4363(83)90237-1
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
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页码:116 / 120
页数:5
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