PHOTO-IONIZATION OF IMPURITY ATOMS IN SEMICONDUCTORS IN THE PRESENCE OF AN APPLIED ELECTRIC-FIELD

被引：10

作者：

COON, DD

KARUNASIRI, RPG

机构：

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 12期

关键词：

D O I：

10.1016/0038-1101(83)90142-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1151 / 1155

页数：5

共 16 条

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CHAPMAN, RA .

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[5] APPLICATION OF QUANTUM-DEFECT METHOD TO OPTICAL TRANSITIONS INVOLVING DEEP EFFECTIVE-MASS-LIKE IMPURITIES IN SEMICONDUCTORS [J].

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[6]

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[7] QUANTUM-MECHANICAL ESTIMATES OF THE SPEED OF FIELD-IONIZATION OF SHALLOW IMPURITY LEVELS [J].

CHAUDHURI, S ;

COON, DD ;

DERKITS, GE .

APPLIED PHYSICS LETTERS, 1980, 37 (01) :111-113

[8] FRACTIONAL-CHARGE IMPURITIES IN SEMICONDUCTORS [J].

CHAUDHURI, S ;

COON, DD ;

DERKITS, GE .

PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1374-1378

[9] RATE OF FIELD-IONIZATION FROM S-STATES WITH A QUANTUM DEFECT [J].

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[10]

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