CURRENT TRANSPORT PHENOMENA IN SIO2-FILMS

被引：3

作者：

RAI, BP ^{[1
]}

SINGH, K ^{[1
]}

SRIVASTAVA, RS ^{[1
]}

机构：

[1] BANARAS HINDU UNIV, DEPT PHYS, VARANASI 221005, INDIA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1976年 / 36卷 / 02期

关键词：

D O I：

10.1002/pssa.2210360219

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：591 / 595

页数：5

共 14 条

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APPLIED PHYSICS LETTERS, 1968, 12 (03) :95-+

[3]

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[4] SPACE-CHARGE-LIMITED IONIC CURRENTS IN SILICON DIOXIDE FILMS [J].

HOFSTEIN, SR .

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[5]

Jonscher A. K., 1967, THIN SOLID FILMS, V1, P213

[6] A NON-FILAMENTARY SWITCHING ACTION IN THERMALLY GROWN SILICON DIOXIDE FILMS [J].

LAMB, DR ;

RUNDLE, PC .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (01) :29-&

[7]

LAMB DR, 1967, ELECTRICAL CONDUCTIO

[8]

LENZLINGER M, 1972, J APPL PHYS, V40, P603

[9] ELECTRICAL-CONDUCTION AND DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].

OSBURN, CM ;

WEITZMAN, EJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :603-+

[10] NONCRYSTALLINE STRUCTURE AND ELECTRONIC CONDUCTION OF SILICON DIOXIDE FILMS [J].

REVESZ, AG .

PHYSICA STATUS SOLIDI, 1967, 24 (01) :115-+

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