SELECTIVE ETCHING OF 3-5 COMPOUNDS WITH REDOX SYSTEMS

被引：38

作者：

TIJBURG, RP ^{[1
]}

VANDONGEN, T ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1976年 / 123卷 / 05期

关键词：

D O I：

10.1149/1.2132910

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：687 / 691

页数：5

共 8 条

[1] STRESS COMPENSATION IN GAAS-AL0.24GA0.76AS1-YPY LPE BINARY LAYERS [J].

BROWN, RL ;

SOBERS, RG .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (11) :4735-4737

[2] CHEMICAL ETCHANT FOR SELECTIVE REMOVAL OF GAAS THROUGH SIO2 MASKS [J].

GANNON, JJ ;

NUESE, CJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1215-1219

[3] ETCHING OF ALXGA1-XAS IN ALKALINE SOLUTION [J].

KOBAYASHI, T ;

SUGIYAMA, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (04) :619-620

[4] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].

LOGAN, RA ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4172-4176

[5]

MARINACE JC, 1969, IBM TECH DISCL B, V12, P427

[6] PREFERENTIAL ETCHING AND ETCHED PROFILE OF GAAS [J].

TARUI, Y ;

KOMIYA, Y ;

HARADA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) :118-&

[7] MESA-STRIPE-GEOMETRY DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

TSUKADA, T ;

ITO, R ;

NAKASHIM.H ;

NAKADA, O .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :356-361

[8]

1967, HDB CHEMISTRY PHYSIC

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