QUANTITATIVE-DETERMINATION OF OXYGEN IN ALGAAS LAYERS BY SECONDARY ION MASS-SPECTROMETRY UNDER O-18 FLUX

被引：7

作者：

ACHTNICH, T ^{[1
]}

BURRI, G ^{[1
]}

ILEGEMS, M ^{[1
]}

机构：

[1] UNIV LAUSANNE,INST EXPTL PHYS,CH-1015 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 04期

关键词：

D O I：

10.1116/1.575792

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2532 / 2536

页数：5

共 11 条

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PY, MA ;

ILEGEMS, M .

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BURRI, G ;

ILEGEMS, M .

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[3]

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[5]

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[7] THE EFFECT OF THE OXYGEN CONCENTRATION ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF ALGAAS FILMS GROWN BY MBE [J].

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[8] SIMULATION STUDIES OF A COMPOSITION ANALYSIS BY THICKNESS-FRINGE (CAT) IN AN ELECTRON-MICROSCOPE IMAGE OF GAAS/ALXGA1-XAS SUPERSTRUCTURE [J].

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