2-DIMENSIONAL MOLECULAR-BEAM EPITAXY OF (001) CDTE ON CD AND ZN TERMINATED (001) GAAS

被引：2

作者：

DHAR, NK

WOOD, CEC

BOYD, PR

POLLEHN, HK

MARTINKA, M

BENSON, JD

DINAN, JH

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

[2] NIGHT VIS & ELECTR SENSORS DIRECTORATE,FT BELVOIR,VA 22060

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 09期

关键词：

CDTE/GAAS; GROWTH MODES; MOLECULAR BEAM EPITAXY (MBE);

D O I：

10.1007/BF02653050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above similar to 200 degrees C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {001}. Threading dislocation density in these layers was 1-2 x 10(5) cm(-2). Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s.

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页码：1041 / 1046

页数：6

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