SUBSTRATE ORIENTATION EFFECTS IN CDXHG1-XTE GROWN BY MOVPE

被引：59

作者：

CAPPER, P

MAXEY, CD

WHIFFIN, PAC

EASTON, BC

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 03期

关键词：

D O I：

10.1016/0022-0248(89)90047-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：519 / 532

页数：14

共 57 条

[1] PHOTO-MOCVD GROWTH OF HGTE-CDTE SUPERLATTICES
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SMITH, EJ
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PATTEN, EA
KNOX, RD
STAUDENMANN, JL
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 198 - 209
[2] AHLGREN WL, 1987, MAT RES SOC S P, V90, P405
[3] ARD CK, UNPUB
[4] INFRARED PHOTODIODES FABRICATED WITH HG1-CHI-CD-CHI-TE GROWN BY MOLECULAR-BEAM EPITAXY
ARIAS, JM
SHIN, SH
PASKO, JG
GERTNER, ER
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (01) : 39 - 41
[5] MBE P-TYPE HG1-XCDXTE GROWN ON THE (110) ORIENTATION
ARIAS, JM
SHIN, SH
GERTNER, ER
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 362 - 366
[6] (100) VERSUS (111)B CRYSTALLOGRAPHIC ORIENTATION OF HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY
ARIAS, JM
SHIN, SH
CHEUNG, JT
CHEN, JS
SIVANANTHAN, S
RENO, J
FAURIE, JP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3133 - 3138
[7] IMPLEMENTATION OF A COMPUTER-CONTROLLED MOVPE SYSTEM TO GROW EPITAXIAL CMT
BEVAN, MJ
WOODHOUSE, KT
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 254 - 261
[8] THE ORGANOMETALLIC HETEROEPITAXY OF CDTE AND HGCDTE ON GAAS SUBSTRATES
BHAT, IB
TASKAR, NR
GHANDHI, SK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2230 - 2233
[9] THE GROWTH OF MERCURY CADMIUM TELLURIDE BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
BHAT, IB
GHANDHI, SK
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 75 (02) : 241 - 246
[10] ELECTRICAL-PROPERTIES OF MOLECULAR-BEAM EPITAXY PRODUCED HGCDTE LAYERS DOPED DURING GROWTH
BOUKERCHE, M
WIJEWARNASURIYA, PS
RENO, J
SOU, IK
FAURIE, JP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (04): : 2072 - 2076

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