MBE P-TYPE HG1-XCDXTE GROWN ON THE (110) ORIENTATION

被引：17

作者：

ARIAS, JM

SHIN, SH

GERTNER, ER

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90743-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：362 / 366

页数：5

共 19 条

[1]

ARIAS JM, IN PRESS J VACUUM SC

[2] MOLECULAR-BEAM EPITAXY OF INSB (110) [J].

BOSCH, AJ ;

VANWELZENIS, RG ;

SCHANNEN, OFZ .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (09) :3434-3439

[3]

CHANG YC, 1987, P SPIE S ADV SEMICON

[4] RECENT PROGRESS ON LADA GROWTH OF HGCDTE AND CDTE EPITAXIAL LAYERS [J].

CHEUNG, JT ;

MAGEE, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1983, 1 (03) :1604-1607

[5] DYNAMICAL ANALYSIS OF LOW-ENERGY-ELECTRON-DIFFRACTION INTENSITIES FROM CDTE(110) [J].

DUKE, CB ;

PATON, A ;

FORD, WK ;

KAHN, A ;

SCOTT, G .

PHYSICAL REVIEW B, 1981, 24 (06) :3310-3317

[6] CHARACTERIZATION OF CDXHG1-XTE P-TYPE LAYERS GROWN BY MBE [J].

FAURIE, JP ;

MILLION, A ;

PIAGUET, J .

JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :10-14

[7] CDXHG1-XTE N-TYPE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

FAURIE, JP ;

MILLION, A .

APPLIED PHYSICS LETTERS, 1982, 41 (03) :264-266

[8] LATEST DEVELOPMENTS IN THE GROWTH OF CDXHG1-XTE AND CDTE-HGTE SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY [J].

FAURIE, JP ;

MILLION, A ;

BOCH, R ;

TISSOT, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1593-1597

[9]

GERTNER ER, 1987, MATER RES SOC S P, V90, P357

[10] ENERGY-GAP VERSUS ALLOY COMPOSITION AND TEMPERATURE IN HG1-XCDXTE [J].

HANSEN, GL ;

SCHMIT, JL ;

CASSELMAN, TN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :7099-7101

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