MBE P-TYPE HG1-XCDXTE GROWN ON THE (110) ORIENTATION

被引：17

作者：

ARIAS, JM

SHIN, SH

GERTNER, ER

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90743-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：362 / 366

页数：5

共 19 条

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[16] CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIALLY GROWN HGCDTE ON CDTE AND INSB BUFFER LAYERS [J].

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FARROW, RFC ;

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TAKEI, WJ ;

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[17] RELATION BETWEEN CRYSTALLOGRAPHIC ORIENTATION AND THE CONDENSATION COEFFICIENTS OF HG, CD, AND TE DURING MOLECULAR-BEAM-EPITAXIAL GROWTH OF HG1-XCDXTE AND CDTE [J].

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CHU, X ;

RENO, J ;

FAURIE, JP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (04) :1359-1363

[18] MOLECULAR-BEAM EPITAXIAL-GROWTH OF CDTE, HGTE, AND HG1-XCDXTE ALLOYS [J].

SUMMERS, CJ ;

MEEKS, EL ;

COX, NW .

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[19]

TARRY HA, 1986, ELECTRON LETT, V22, P416, DOI 10.1049/el:19860284

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