PLANAR DOUBLE GATE QUANTUM-WIRE TRANSISTOR

A planar double gate quantum wire transistor (QWT) is proposed and demonstrated. The transistor uses a narrow wire gate placed inside the gap of a split gate to create a single one-dimensional (1D) quantum wire (QW). We demonstrate theoretically and experimentally that the wire gate can create a QW potential with a better confinement and therefore larger subband separations than that in other split-gate QWTs, and that the split gate can adjust the number of electrons inside the QW while keeping the ID QW potential almost unchanged. Furthermore, we found that, in the double gate QWT, a ID electron channel can spatially overlap with a 2D electron channel without significant mixing.