HIGH-POWER NARROW BEAM SINGLEMODE ARROW-TYPE INGAAS/INGAASP/INGAP DIODE-LASERS

被引：2

作者：

BHATTACHARYA, A

MAWST, LJ

NESNIDAL, MP

LOPEZ, J

BOTEZ, D

机构：

[1] Reed Center for Photonics, University of Wisconsin, Madison, WI 53706

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 21期

关键词：

SEMICONDUCTOR JUNCTION LASERS; ANTIRESONANT REFLECTING OPTICAL WAVE-GUIDES;

D O I：

10.1049/el:19951233

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors have obtained, from 20 mu m aperture 0.98 mu m wavelength three-core ARROW-type InGaAs/InGaAsP/InGaP diode lasers, a diffraction-limited beam pattern up to 0.55W peak-pulsed power with 78% of the light in the central lobe; and near diffraction-limited-beam operation to 0.7W. Interelement optical absorption loss is found to be important for improved beam quality at high drive levels, in good agreement with theory.

引用

页码：1837 / 1838

页数：2

共 9 条

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