NEGATIVE PHOTOCONDUCTIVITY IN MODULATION-DOPED QUANTUM WELLS

被引：3

作者：

HOPFEL, RA

JUEN, S

SHAH, J

GOSSARD, AC

机构：

[1] AT&T BELL LABS, HOLMDEL, NJ 07733 USA

[2] UNIV CALIF SANTA BARBARA, DEPT PHYS, SANTA BARBARA, CA 93106 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1989年 / 5卷 / 01期

关键词：

D O I：

10.1016/0749-6036(89)90062-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：15 / 18

页数：4

共 6 条

[1] GAAS STRUCTURES WITH ELECTRON-MOBILITY OF 5X10(6)CM2/VS [J].

ENGLISH, JH ;

GOSSARD, AC ;

STORMER, HL ;

BALDWIN, KW .

APPLIED PHYSICS LETTERS, 1987, 50 (25) :1826-1828

[2]

HOPFEL RA, 1987, APPL PHYS LETT, V51, P106, DOI 10.1063/1.98638

[3]

HOPFEL RA, 1988, APPL PHYS LETT, V52, P801, DOI 10.1063/1.99288

[4] NEGATIVE ABSOLUTE MOBILITY OF MINORITY ELECTRONS IN GAAS QUANTUM-WELLS [J].

HOPFEL, RA ;

SHAH, J ;

WOLFF, PA ;

GOSSARD, AC .

PHYSICAL REVIEW LETTERS, 1986, 56 (25) :2736-2739

[5] ELECTRON-HOLE SCATTERING IN GAAS QUANTUM WELLS [J].

HOPFEL, RA ;

SHAH, J ;

WOLFF, PA ;

GOSSARD, AC .

PHYSICAL REVIEW B, 1988, 37 (12) :6941-6954

[6] TRANSPORT-PROPERTIES OF GAAS IGFETS [J].

TSUI, DC ;

GOSSARD, AC ;

KAMINSKY, G ;

WIEGMANN, W .

SURFACE SCIENCE, 1982, 113 (1-3) :464-466

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