COMPARATIVE SIMS AND SNMS ANALYSES OF AMORPHOUS-SEMICONDUCTOR THIN-FILMS

被引：9

作者：

GNASER, H

BOCK, W

OECHSNER, H

BHATTACHARAYYA, TK

机构：

[1] UNIV KAISERSLAUTERN,INST OBERFLACHEN & SCHICHTANALYT,W-6750 KAISERSLAUTERN,GERMANY

[2] INDIAN ASSOC CULTIVAT SCI,CALCUTTA 700032,W BENGAL,INDIA

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷 / 1 -4 pt A期

关键词：

D O I：

10.1016/0169-4332(93)90395-R

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Various amorphous semiconductor thin-film structures were investigated by electron-gas sputtered neutral mass spectrometry (SNMS) and secondary ion mass spectrometry (SIMS). For the latter technique, cesium bombardment in conjunction with the detection of positive MCs+ secondary ions (M stands for the element of interest) were employed. Using this detection scheme, quantification is demonstrated for a series of a-SixGe1-x:H samples. Data obtained on more complex pin-multilayers indicate generally a good agreement between SNMS and SIMS; while MCs+ SIMS is more sensitive for many elements, mass interferences can limit the analytical applicability of MCs+ molecular secondary ions.

引用

页码：44 / 48

页数：5