HOLE PHOTOCURRENTS AND ELECTRON TUNNEL INJECTION INDUCED BY TRAPPED HOLES IN SIO2-FILMS

被引：41

作者：

POWELL, RJ ^{[1
]}

机构：

[1] RCA LABS,PRINCETON,NJ 08540

来源：

关键词：

D O I：

10.1063/1.321394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4557 / 4563

页数：7

共 17 条

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SROUR, JR ;

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[3]

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[4]

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[5]

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[6]

HUGHES GW, 1975, N0001474C0185 CONTR

[7]

Hughes H. L., 1964, ELECTRONICS, V37, P58

HUGHES, RC .

[9] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

LENZLINGER, M ;

SNOW, EH .

[10]

MOTT NF, 1948, ELECTRONIC PROCESSES