NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETS

被引：7

作者：

LO, SH ^{[1
]}

LEE, CP ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST ELECTR,HSINCHU,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 08期

关键词：

D O I：

10.1109/16.119003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The small-signal output conductance of GaAs MESFET's on semi-insulating substrate has been studied using two-dimensional numerical analysis. Frequency-, temperature-, and drain-bias-dependent behaviors of the output conductance are analyzed. It is confirmed that the bulk EL2 traps contribute significantly to the low-frequency-dependent behavior of the output conductance. Devices with different background trap concentration and acceptor concentration have been analyzed and compared. For devices with higher trap concentration and higher acceptor concentration, the output conductance is lower but exhibits stronger frequency dependence.

引用

页码：1693 / 1700

页数：8

共 18 条

[1]

AMACHOPENALOSA C, 1985, ELECTRON LETT, V21, P528

[2] BURIED-CHANNEL GAAS-MESFETS WITH FREQUENCY-INDEPENDENT OUTPUT CONDUCTANCE [J].